MCC introduces the MCACLS1D6N06YH , a 60 V N-channel power MOSFET designed to address common challenges in high-current power designs, including power loss, limited board space, and thermal management. Housed in a compact and thermally efficient PDFN5060-DSC-B package, this device supports high-density layouts while enabling improved heat dissipation.
With ultra-low RDS(on) down to 1.6 mΩ and support for continuous current up to 300 A, the MCACLS1D6N06YH enables efficient and reliable high-current switching. Advanced split-gate trench MOSFET technology enhances switching performance, while dual-side cooling improves thermal efficiency by enabling heat flow through both the top and bottom of the package. This makes the device well suited for space-constrained applications such as DC-DC converters, power distribution, motor control, and portable or industrial power systems.
Features & Benefits:
- N-channel power MOSFET for high-efficiency switching
- Ultra-low on-resistance: 1.6 mΩ (max) at VGS = 10 V
- 60 V drain-source rating for 12 V and 24 V systems
- High current capability up to 300 A
- Split-gate trench technology for reduced switching losses
- PDFN5060-DSC-B package (5.0 mm × 6.0 mm) with dual-side cooling
- Optimized Thermal Performance with Dual-Side Cooling
